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OCT10N10K

OCT10N10K

1498626595543363584

数据手册 样品申请

  • 产品描述

    • 商品名称: OCT10N10K
    • Package: TO-252-3L
    • Technology: Trench
    • Confi- guration: N
    • VDS_Max (V): 100
    • ID_Max (A): 10
    • VGS(th)_Typ (V): 1.5
    • RDS(ON)_Typ @ VGS = 10V (mΩ): 86
    • RDS(ON)_Typ @ VGS = 4.5V (mΩ): 96
    • VGS_Max (V): ±20
    • EAS_Max (mJ): -
    • Ciss_Typ (pF): 847
    • Coss_Typ (pF): 40
    • Crss_Typ (pF): 12
    • ESD: No
    • MPQ （pcs）: 3000
    • MOQ （pcs）: 120000

    ● N- channel Enhancement Mode Power MOSFET

    封装标识与订购信息（Package Marking and Ordering Information）

    ● DeviceMarking Device Outline Package ReelSize Reel(pcs) PerCarton

    ● (pcs)

    ● OCT10N10K OCT10N10K TAPING TO-252-3L 13" 2500 25000

    绝对最大额定值（Absolute Maximum Ratings）

    ● Symbol Parameter Value Units

    ● VDS Drain-to-Source Voltage 100 V

    ● VGS Gate-to-Source Voltage ±20 V

    ● TC=25°C 15

    ● ID Continuous Drain Current T=100°C 9 A

    ● C

    ● IDM Pulsed Drain Current(1) 60 A

    ● EAS Single Pulsed Avalanche Energy(2) 6 mJ

    ● PD Power Dissipation TC=25°C 44 W

产品简介

产品特性

应用场景

产品简介

产品特性

● N- channel Enhancement Mode Power MOSFET

封装标识与订购信息（Package Marking and Ordering Information）

● DeviceMarking Device Outline Package ReelSize Reel(pcs) PerCarton

● (pcs)

● OCT10N10K OCT10N10K TAPING TO-252-3L 13" 2500 25000

绝对最大额定值（Absolute Maximum Ratings）

● Symbol Parameter Value Units

● VDS Drain-to-Source Voltage 100 V

● VGS Gate-to-Source Voltage ±20 V

● TC=25°C 15

● ID Continuous Drain Current T=100°C 9 A

● C

● IDM Pulsed Drain Current(1) 60 A

● EAS Single Pulsed Avalanche Energy(2) 6 mJ

● PD Power Dissipation TC=25°C 44 W

应用场景